Перегляд за автором "Sizov, F.F."

Сортувати за: Порядок: Результатів:

  • Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells 
    Melezhik, E.O.; Gumenjuk-Sichevsk, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon ...
  • Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern 
    Sizov, F.F.; Tsybrii, Z.F.; Zabudsky, V.V.; Sakhno, M.V.; Shevchik-Shekera, A.V.; Dukhnin, S.Ye.; Golenkov, A.G.; Dieguez, E.; Dvoretsky, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas ...
  • Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry 
    Odarych, V.A.; Sarsembaeva, A.Z.; Vuichyk, M.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The multiangular ellipsometric measurements were conducted at two wavelengths 435 and 579 nm on the system that contains cadmium telluride film deposited onto the monocrystalline silicon substrate. The refraction index and ...
  • Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence 
    Savkina, R.K.; Smirnov, A.B.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall ...
  • Electron relaxation and mobility in the inverted band quantum well CdTe/Hg₁₋xCdxTe/CdTe 
    Melezhik, Ye.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Electron relaxation processes at nitrogen temperatures in CdTe/Hg₁₋xCdxTe/CdTe quantum well (QW) with an inverted band structure is modelled. In this structure, scattering by longitudinal optical phonons, charged impurities, ...
  • Ellipsometric control of quality of polished MgF₂ optical ceramics 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Erratum: to the paper “Influence of elastic deformation on the residual ellipticity of polished optical materials” 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...
  • Influence of elastic deformation on the residual ellipticity of polished optical materials 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, there are no data upon investigations of influence of elastic deformations on parameters of reflected polarised light in the ...
  • Infrared blocking materials 
    Tsybrii, Z.F.; Sizov, F.F.; Golenkov, A.G. (Доповіді НАН України, 2020)
    AlN thin films on the flexible polymeric Teflon and Mylar substrates show characteristics of efficient infrared (IR) blocking filters (IR “stealth”). They can suppress heat flows from the warm parts of objects (T ~ 300÷500 ...
  • Infrared detectors: outlook and means 
    Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    New materials and technologies for large scale IR arrays, readouts for them and several principal trends of IR large scale array detectors development as well as their applications in different weather conditions are briefly ...
  • Investigation of cadmium telluride films on silicon substrate 
    Odarych, V.A.; Sarsembaeva, A.Z.; Sizov, F.F.; Vuichyk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index ...
  • IR sensor readout devices with source input circuits 
    Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • Narrow-gap piezoelectric heterostructure as IR detector 
    Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The ...
  • Noise in HgCdTe LWIR arrays 
    Sizov, F.F.; Golenkov, A.G.; Zabudsky, V.V.; Reva, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Mercury cadmium telluride (MCT) hybrid arrays for long-wavelength infrared (LWIR) applications with n+-p-diodes and n-channel charged coupled devices (CCD) silicon readouts were designed, manufactured and tested. Performance ...
  • Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes 
    Ivasiv, Z.F.; Sizov, F.F.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to ...
  • Optically induced change of photoelectric properties of CdMnTe crystals 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B. (Functional Materials, 2005)
    To study the optically induced transformation of the point defect system under strong ans weak excitation from the intrinsic absorption hv > Eg, photoelectric and electric properties of semiconductor solid solutions С₁-хМnхТе ...
  • Performance limits of terahertz zero biased rectifying detectors for direct detection 
    Golenkov, A.G.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in ...
  • Photoelectrical characteristics of two-dimensional macroporous silicon structures 
    Karachevtseva, L.A.; Onischenko, V.F.; Karas, M.I.; Dandur’yants, O.I.; Sizov, F.F.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode ...
  • Properties of CdTe thin films prepared by hot wall epitaxy 
    Bilevych, Ye.O.; Boka, A.I.; Darchuk, L.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F.; Boelling, O.; Sulkio-Cleff, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin ...